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BSM75GB170DN2HOSA1 Datasheet

BSM75GB170DN2HOSA1 Datasheet
Total Pages: 10
Size: 308.41 KB
Infineon Technologies
This datasheet covers 1 part numbers: BSM75GB170DN2HOSA1
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BSM75GB170DN2HOSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Configuration

Half Bridge

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

110A

Power - Max

625W

Vce(on) (Max) @ Vge, Ic

3.9V @ 15V, 75A

Current - Collector Cutoff (Max)

-

Input Capacitance (Cies) @ Vce

11nF @ 25V

Input

Standard

NTC Thermistor

No

Operating Temperature

150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

Module

Supplier Device Package

Module