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BSO303PNTMA1 Datasheet

BSO303PNTMA1 Datasheet
Total Pages: 8
Size: 312.47 KB
Infineon Technologies
This datasheet covers 1 part numbers: BSO303PNTMA1
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BSO303PNTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8.2A

Rds On (Max) @ Id, Vgs

21mOhm @ 8.2A, 10V

Vgs(th) (Max) @ Id

2V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

72.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1761pF @ 25V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

P-DSO-8