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BSO615N Datasheet

BSO615N Datasheet
Total Pages: 14
Size: 564.84 KB
Infineon Technologies
This datasheet covers 1 part numbers: BSO615N
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BSO615N

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2.6A

Rds On (Max) @ Id, Vgs

150mOhm @ 2.6A, 4.5V

Vgs(th) (Max) @ Id

2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

380pF @ 25V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

PG-DSO-8