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BSS123/LF1R Datasheet

BSS123/LF1R Datasheet
Total Pages: 5
Size: 139.62 KB
Nexperia
This datasheet covers 2 part numbers: BSS123/LF1R, BSS123,215
BSS123/LF1R Datasheet Page 1
BSS123/LF1R Datasheet Page 2
BSS123/LF1R Datasheet Page 3
BSS123/LF1R Datasheet Page 4
BSS123/LF1R Datasheet Page 5
BSS123/LF1R

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

150mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6Ohm @ 120mA, 10V

Vgs(th) (Max) @ Id

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

40pF @ 25V

FET Feature

-

Power Dissipation (Max)

250mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3

BSS123,215

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

150mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6Ohm @ 120mA, 10V

Vgs(th) (Max) @ Id

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

40pF @ 25V

FET Feature

-

Power Dissipation (Max)

250mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3