BSS131L6327HTSA1 Datasheet
|
Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 240V Current - Continuous Drain (Id) @ 25°C 110mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 14Ohm @ 100mA, 10V Vgs(th) (Max) @ Id 1.8V @ 56µA Gate Charge (Qg) (Max) @ Vgs 3.1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 77pF @ 25V FET Feature - Power Dissipation (Max) 360mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 240V Current - Continuous Drain (Id) @ 25°C 110mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 14Ohm @ 100mA, 10V Vgs(th) (Max) @ Id 1.8V @ 56µA Gate Charge (Qg) (Max) @ Vgs 3.1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 77pF @ 25V FET Feature - Power Dissipation (Max) 360mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
