BSS192PE6327 Datasheet
BSS192PE6327 Datasheet
Total Pages: 8
Size: 79.38 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
BSS192PE6327
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Manufacturer Infineon Technologies Series SIPMOS® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 190mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V Rds On (Max) @ Id, Vgs 12Ohm @ 190mA, 10V Vgs(th) (Max) @ Id 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 104pF @ 25V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT89 Package / Case TO-243AA |
