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BSS84PW L6327 Datasheet

BSS84PW L6327 Datasheet
Total Pages: 8
Size: 133.03 KB
Infineon Technologies
This datasheet covers 2 part numbers: BSS84PW L6327, BSS84PW
BSS84PW L6327 Datasheet Page 1
BSS84PW L6327 Datasheet Page 2
BSS84PW L6327 Datasheet Page 3
BSS84PW L6327 Datasheet Page 4
BSS84PW L6327 Datasheet Page 5
BSS84PW L6327 Datasheet Page 6
BSS84PW L6327 Datasheet Page 7
BSS84PW L6327 Datasheet Page 8
BSS84PW L6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

150mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8Ohm @ 150mA, 10V

Vgs(th) (Max) @ Id

2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

1.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

19.1pF @ 25V

FET Feature

-

Power Dissipation (Max)

300mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT323-3

Package / Case

SC-70, SOT-323

BSS84PW

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

150mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8Ohm @ 150mA, 10V

Vgs(th) (Max) @ Id

2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

1.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

19.1pF @ 25V

FET Feature

-

Power Dissipation (Max)

300mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT323-3

Package / Case

SC-70, SOT-323