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BSV236SP L6327 Datasheet

BSV236SP L6327 Datasheet
Total Pages: 8
Size: 80.23 KB
Infineon Technologies
This datasheet covers 1 part numbers: BSV236SP L6327
BSV236SP L6327 Datasheet Page 1
BSV236SP L6327 Datasheet Page 2
BSV236SP L6327 Datasheet Page 3
BSV236SP L6327 Datasheet Page 4
BSV236SP L6327 Datasheet Page 5
BSV236SP L6327 Datasheet Page 6
BSV236SP L6327 Datasheet Page 7
BSV236SP L6327 Datasheet Page 8
BSV236SP L6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

175mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 8µA

Gate Charge (Qg) (Max) @ Vgs

5.7nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

228pF @ 15V

FET Feature

-

Power Dissipation (Max)

560mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT363-6

Package / Case

6-VSSOP, SC-88, SOT-363