BSZ023N04LSATMA1 Datasheet
BSZ023N04LSATMA1 Datasheet
Total Pages: 13
Size: 494.18 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
BSZ023N04LSATMA1
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 22A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.35mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2630pF @ 20V FET Feature - Power Dissipation (Max) 2.1W (Ta), 69W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSDSON-8-FL Package / Case 8-PowerTDFN |
