Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BUK7Y35-55B Datasheet

BUK7Y35-55B Datasheet
Total Pages: 15
Size: 312.11 KB
NXP
This datasheet covers 1 part numbers: BUK7Y35-55B,115
BUK7Y35-55B Datasheet Page 1
BUK7Y35-55B Datasheet Page 2
BUK7Y35-55B Datasheet Page 3
BUK7Y35-55B Datasheet Page 4
BUK7Y35-55B Datasheet Page 5
BUK7Y35-55B Datasheet Page 6
BUK7Y35-55B Datasheet Page 7
BUK7Y35-55B Datasheet Page 8
BUK7Y35-55B Datasheet Page 9
BUK7Y35-55B Datasheet Page 10
BUK7Y35-55B Datasheet Page 11
BUK7Y35-55B Datasheet Page 12
BUK7Y35-55B Datasheet Page 13
BUK7Y35-55B Datasheet Page 14
BUK7Y35-55B Datasheet Page 15

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

28.43A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

35mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

13.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

781pF @ 25V

FET Feature

-

Power Dissipation (Max)

60W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669