CMF20120D Datasheet
|
Manufacturer Cree/Wolfspeed Series Z-FET™ FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 90.8nC @ 20V Vgs (Max) +25V, -5V Input Capacitance (Ciss) (Max) @ Vds 1915pF @ 800V FET Feature - Power Dissipation (Max) 215W (Tc) Operating Temperature -55°C ~ 135°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
