DD1200S12H4HOSA1 Datasheet
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Manufacturer Infineon Technologies Series - IGBT Type - Configuration 2 Independent Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 1200A Power - Max 1200000W Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 1200A Current - Collector Cutoff (Max) - Input Capacitance (Cies) @ Vce - Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |
Manufacturer Infineon Technologies Series - Diode Configuration 2 Independent Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) (per Diode) - Voltage - Forward (Vf) (Max) @ If 2.35V @ 1200A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 475A @ 600V Operating Temperature - Junction -40°C ~ 150°C Mounting Type Chassis Mount Package / Case Module Supplier Device Package AG-IHMB130-2 |
