DF200R12W1H3B27BOMA1 Datasheet
DF200R12W1H3B27BOMA1 Datasheet
Total Pages: 11
Size: 747 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
DF200R12W1H3B27BOMA1
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Manufacturer Infineon Technologies Series - IGBT Type - Configuration 2 Independent Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 30A Power - Max 375W Vce(on) (Max) @ Vge, Ic 1.3V @ 15V, 30A Current - Collector Cutoff (Max) 1mA Input Capacitance (Cies) @ Vce 2nF @ 25V Input Standard NTC Thermistor Yes Operating Temperature -40°C ~ 150°C Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |
