DF23MR12W1M1B11BOMA1 Datasheet
DF23MR12W1M1B11BOMA1 Datasheet
Total Pages: 10
Size: 583.63 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
DF23MR12W1M1B11BOMA1
|
Manufacturer Infineon Technologies Series CoolSiC™+ FET Type 2 N-Channel (Dual) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 25A Rds On (Max) @ Id, Vgs 45mOhm @ 25A, 15V Vgs(th) (Max) @ Id 5.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs 620nC @ 15V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 800V Power - Max 20mW Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |
