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DMN2005LP4K-7 Datasheet

DMN2005LP4K-7 Datasheet
Total Pages: 7
Size: 436.66 KB
Diodes Incorporated
This datasheet covers 1 part numbers: DMN2005LP4K-7
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DMN2005LP4K-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 10mA, 4V

Vgs(th) (Max) @ Id

900mV @ 100µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

41pF @ 3V

FET Feature

-

Power Dissipation (Max)

400mW (Ta)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

X2-DFN1006-3

Package / Case

3-XFDFN