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DMN2080UCB4-7 Datasheet

DMN2080UCB4-7 Datasheet
Total Pages: 7
Size: 584.47 KB
Diodes Incorporated
This datasheet covers 1 part numbers: DMN2080UCB4-7
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DMN2080UCB4-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

56mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.4nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

540pF @ 10V

FET Feature

-

Power Dissipation (Max)

710mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

X2-WLB0606-4

Package / Case

4-XFBGA, WLBGA