Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMN4468LSS-13 Datasheet

DMN4468LSS-13 Datasheet
Total Pages: 6
Size: 220.63 KB
Diodes Incorporated
This datasheet covers 1 part numbers: DMN4468LSS-13
DMN4468LSS-13 Datasheet Page 1
DMN4468LSS-13 Datasheet Page 2
DMN4468LSS-13 Datasheet Page 3
DMN4468LSS-13 Datasheet Page 4
DMN4468LSS-13 Datasheet Page 5
DMN4468LSS-13 Datasheet Page 6
DMN4468LSS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14mOhm @ 11.6A, 10V

Vgs(th) (Max) @ Id

1.95V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18.85nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

867pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.52W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)