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DMN4800LSS-13 Datasheet

DMN4800LSS-13 Datasheet
Total Pages: 6
Size: 217.41 KB
Diodes Incorporated
This datasheet covers 1 part numbers: DMN4800LSS-13
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DMN4800LSS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.47nC @ 5V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

798pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.46W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)