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DMN61D9UW-13 Datasheet

DMN61D9UW-13 Datasheet
Total Pages: 6
Size: 480.13 KB
Diodes Incorporated
This datasheet covers 2 part numbers: DMN61D9UW-13, DMN61D9UW-7
DMN61D9UW-13 Datasheet Page 1
DMN61D9UW-13 Datasheet Page 2
DMN61D9UW-13 Datasheet Page 3
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DMN61D9UW-13 Datasheet Page 5
DMN61D9UW-13 Datasheet Page 6
DMN61D9UW-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

340mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 5V

Rds On (Max) @ Id, Vgs

2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.4nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

28.5pF @ 30V

FET Feature

-

Power Dissipation (Max)

320mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-323

Package / Case

SC-70, SOT-323

DMN61D9UW-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

340mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 5V

Rds On (Max) @ Id, Vgs

2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.4nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

28.5pF @ 30V

FET Feature

-

Power Dissipation (Max)

320mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-323

Package / Case

SC-70, SOT-323