DMT10H010LK3-13 Datasheet
DMT10H010LK3-13 Datasheet
Total Pages: 7
Size: 482.8 KB
Diodes Incorporated
Website: https://www.diodes.com/
This datasheet covers 1 part numbers:
DMT10H010LK3-13
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 68.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 8.8mOhm @ 13A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 53.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2592pF @ 50V FET Feature - Power Dissipation (Max) 3W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
