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DMT10H010SPS-13 Datasheet

DMT10H010SPS-13 Datasheet
Total Pages: 7
Size: 515.39 KB
Diodes Incorporated
This datasheet covers 1 part numbers: DMT10H010SPS-13
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DMT10H010SPS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

10.7A (Ta), 113A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

8.8mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

56.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4.468nF @ 50V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN