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E3M0120090D Datasheet

E3M0120090D Datasheet
Total Pages: 10
Size: 694.67 KB
Cree/Wolfspeed
This datasheet covers 1 part numbers: E3M0120090D
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E3M0120090D

Cree/Wolfspeed

Manufacturer

Cree/Wolfspeed

Series

Automotive, AEC-Q101, E

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

Rds On (Max) @ Id, Vgs

155mOhm @ 15A, 15V

Vgs(th) (Max) @ Id

3.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

17.3nC @ 15V

Vgs (Max)

+18V, -8V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 600V

FET Feature

-

Power Dissipation (Max)

97W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3