EPC2111ENGRT Datasheet
|
Manufacturer EPC Series - FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 16A (Ta) Rds On (Max) @ Id, Vgs 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V Vgs(th) (Max) @ Id 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 5V, 5.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 230pF @ 15V, 590pF @ 15V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer EPC Series - FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 16A (Ta) Rds On (Max) @ Id, Vgs 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V Vgs(th) (Max) @ Id 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 5V, 5.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 230pF @ 15V, 590pF @ 15V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
