FCP13N60N Datasheet
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Manufacturer ON Semiconductor Series SupreMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 258mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 39.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1765pF @ 100V FET Feature - Power Dissipation (Max) 116W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
Manufacturer ON Semiconductor Series SuperMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 258mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 39.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1765pF @ 100V FET Feature - Power Dissipation (Max) 33.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |
