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FDMC8878_F126 Datasheet

FDMC8878_F126 Datasheet
Total Pages: 7
Size: 181.52 KB
ON Semiconductor
This datasheet covers 2 part numbers: FDMC8878_F126, FDMC8878
FDMC8878_F126 Datasheet Page 1
FDMC8878_F126 Datasheet Page 2
FDMC8878_F126 Datasheet Page 3
FDMC8878_F126 Datasheet Page 4
FDMC8878_F126 Datasheet Page 5
FDMC8878_F126 Datasheet Page 6
FDMC8878_F126 Datasheet Page 7
FDMC8878_F126

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9.6A (Ta), 16.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14mOhm @ 9.6A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1230pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 31W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-MLP (3.3x3.3)

Package / Case

8-PowerWDFN

FDMC8878

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9.6A (Ta), 16.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14mOhm @ 9.6A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1230pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 31W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-MLP (3.3x3.3), Power33

Package / Case

8-PowerWDFN