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FDP20AN06A0 Datasheet

FDP20AN06A0 Datasheet
Total Pages: 11
Size: 617.29 KB
ON Semiconductor
This datasheet covers 2 part numbers: FDP20AN06A0, FDB20AN06A0
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FDP20AN06A0

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

9A (Ta), 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20mOhm @ 45A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

950pF @ 25V

FET Feature

-

Power Dissipation (Max)

90W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

FDB20AN06A0

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

9A (Ta), 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20mOhm @ 45A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

950pF @ 25V

FET Feature

-

Power Dissipation (Max)

90W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263AB

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB