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FDT434P Datasheet

FDT434P Datasheet
Total Pages: 5
Size: 416.09 KB
ON Semiconductor
This datasheet covers 1 part numbers: FDT434P
FDT434P Datasheet Page 1
FDT434P Datasheet Page 2
FDT434P Datasheet Page 3
FDT434P Datasheet Page 4
FDT434P Datasheet Page 5
FDT434P

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

50mOhm @ 6A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1187pF @ 10V

FET Feature

-

Power Dissipation (Max)

3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223-4

Package / Case

TO-261-4, TO-261AA