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FGP10N60UNDF Datasheet

FGP10N60UNDF Datasheet
Total Pages: 11
Size: 328.98 KB
ON Semiconductor
This datasheet covers 1 part numbers: FGP10N60UNDF
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FGP10N60UNDF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

30A

Vce(on) (Max) @ Vge, Ic

2.45V @ 15V, 10A

Power - Max

139W

Switching Energy

150µJ (on), 50µJ (off)

Input Type

Standard

Gate Charge

37nC

Td (on/off) @ 25°C

8ns/52.2ns

Test Condition

400V, 10A, 10Ohm, 15V

Reverse Recovery Time (trr)

37.7ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3