FJP5200RTU Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 17A Voltage - Collector Emitter Breakdown (Max) 250V Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A Current - Collector Cutoff (Max) 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 55 @ 1A, 5V Power - Max 80W Frequency - Transition 30MHz Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 17A Voltage - Collector Emitter Breakdown (Max) 250V Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A Current - Collector Cutoff (Max) 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A, 5V Power - Max 80W Frequency - Transition 30MHz Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
