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FQB25N33TM Datasheet

FQB25N33TM Datasheet
Total Pages: 8
Size: 1,043.03 KB
ON Semiconductor
This datasheet covers 1 part numbers: FQB25N33TM
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FQB25N33TM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

330V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

230mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 15V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2010pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB