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FQB7N10LTM Datasheet

FQB7N10LTM Datasheet
Total Pages: 9
Size: 556.35 KB
ON Semiconductor
This datasheet covers 2 part numbers: FQB7N10LTM, FQI7N10LTU
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FQB7N10LTM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

350mOhm @ 3.65A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

290pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.75W (Ta), 40W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FQI7N10LTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

350mOhm @ 3.65A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

290pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.75W (Ta), 40W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA