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FQN1N50CTA Datasheet

FQN1N50CTA Datasheet
Total Pages: 10
Size: 1,429.02 KB
ON Semiconductor
This datasheet covers 1 part numbers: FQN1N50CTA
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FQN1N50CTA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

380mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6Ohm @ 190mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.4nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

195pF @ 25V

FET Feature

-

Power Dissipation (Max)

890mW (Ta), 2.08W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)