Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FQN1N60CTA Datasheet

FQN1N60CTA Datasheet
Total Pages: 10
Size: 891.53 KB
ON Semiconductor
This datasheet covers 1 part numbers: FQN1N60CTA
FQN1N60CTA Datasheet Page 1
FQN1N60CTA Datasheet Page 2
FQN1N60CTA Datasheet Page 3
FQN1N60CTA Datasheet Page 4
FQN1N60CTA Datasheet Page 5
FQN1N60CTA Datasheet Page 6
FQN1N60CTA Datasheet Page 7
FQN1N60CTA Datasheet Page 8
FQN1N60CTA Datasheet Page 9
FQN1N60CTA Datasheet Page 10
FQN1N60CTA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

300mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11.5Ohm @ 150mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.2nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

170pF @ 25V

FET Feature

-

Power Dissipation (Max)

1W (Ta), 3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)