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FQPF13N10L Datasheet

FQPF13N10L Datasheet
Total Pages: 8
Size: 554.45 KB
ON Semiconductor
This datasheet covers 1 part numbers: FQPF13N10L
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FQPF13N10L

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

8.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

180mOhm @ 4.35A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

520pF @ 25V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack