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GA05JT03-46 Datasheet

GA05JT03-46 Datasheet
Total Pages: 11
Size: 1,685.46 KB
GeneSiC Semiconductor
This datasheet covers 1 part numbers: GA05JT03-46
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GA05JT03-46

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

FET Type

-

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

240mOhm @ 5A

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

20W (Tc)

Operating Temperature

-55°C ~ 225°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-46

Package / Case

TO-46-3