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GAP05SLT80-220 Datasheet

GAP05SLT80-220 Datasheet
Total Pages: 4
Size: 258.67 KB
GeneSiC Semiconductor
This datasheet covers 1 part numbers: GAP05SLT80-220
GAP05SLT80-220 Datasheet Page 1
GAP05SLT80-220 Datasheet Page 2
GAP05SLT80-220 Datasheet Page 3
GAP05SLT80-220 Datasheet Page 4
GAP05SLT80-220

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

8000V

Current - Average Rectified (Io)

50mA (DC)

Voltage - Forward (Vf) (Max) @ If

4.6V @ 50mA

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

3.8µA @ 8000V

Capacitance @ Vr, F

25pF @ 1V, 1MHz

Mounting Type

Through Hole

Package / Case

Axial

Supplier Device Package

-

Operating Temperature - Junction

-55°C ~ 175°C