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GB02SHT03-46 Datasheet

GB02SHT03-46 Datasheet
Total Pages: 4
Size: 374.2 KB
GeneSiC Semiconductor
This datasheet covers 1 part numbers: GB02SHT03-46
GB02SHT03-46 Datasheet Page 1
GB02SHT03-46 Datasheet Page 2
GB02SHT03-46 Datasheet Page 3
GB02SHT03-46 Datasheet Page 4
GB02SHT03-46

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

300V

Current - Average Rectified (Io)

4A (DC)

Voltage - Forward (Vf) (Max) @ If

1.6V @ 1A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

5µA @ 300V

Capacitance @ Vr, F

76pF @ 1V, 1MHz

Mounting Type

Through Hole

Package / Case

TO-206AB, TO-46-3 Metal Can

Supplier Device Package

TO-46

Operating Temperature - Junction

-55°C ~ 225°C