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GB2X100MPS12-227 Datasheet

GB2X100MPS12-227 Datasheet
Total Pages: 7
Size: 809.7 KB
GeneSiC Semiconductor
This datasheet covers 1 part numbers: GB2X100MPS12-227
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GB2X100MPS12-227

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

2 Independent

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io) (per Diode)

185A (DC)

Voltage - Forward (Vf) (Max) @ If

1.8V @ 100A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

80µA @ 1200V

Operating Temperature - Junction

-55°C ~ 175°C

Mounting Type

Chassis Mount

Package / Case

SOT-227-4, miniBLOC

Supplier Device Package

SOT-227