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GP1M020A050N Datasheet

GP1M020A050N Datasheet
Total Pages: 5
Size: 559.22 KB
Global Power Technologies Group
This datasheet covers 1 part numbers: GP1M020A050N
GP1M020A050N Datasheet Page 1
GP1M020A050N Datasheet Page 2
GP1M020A050N Datasheet Page 3
GP1M020A050N Datasheet Page 4
GP1M020A050N Datasheet Page 5
GP1M020A050N

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

300mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3094pF @ 25V

FET Feature

-

Power Dissipation (Max)

312W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3