HAT2160H-EL-E Datasheet
HAT2160H-EL-E Datasheet
Total Pages: 10
Size: 103.65 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
HAT2160H-EL-E
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 60A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.6mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 54nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7750pF @ 10V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK Package / Case SC-100, SOT-669 |
