HGT1S20N36G3VL Datasheet
HGT1S20N36G3VL Datasheet
Total Pages: 7
Size: 256.96 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
HGT1S20N36G3VL
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 395V Current - Collector (Ic) (Max) 37.7A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 1.9V @ 5V, 20A Power - Max 150W Switching Energy - Input Type Logic Gate Charge 28.7nC Td (on/off) @ 25°C -/15µs Test Condition 300V, 10A, 25Ohm, 5V Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package I2PAK (TO-262) |
