HN3C51F-GR(TE85L Datasheet
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V Power - Max 300mW Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-74, SOT-457 Supplier Device Package SM6 |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 350 @ 2mA, 6V Power - Max 300mW Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-74, SOT-457 Supplier Device Package SM6 |
