HS54095TZ-E Datasheet
HS54095TZ-E Datasheet
Total Pages: 9
Size: 118.06 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
HS54095TZ-E
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 16.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 66pF @ 25V FET Feature - Power Dissipation (Max) 750mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 Short Body |
