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IPD80R360P7ATMA1 Datasheet

IPD80R360P7ATMA1 Datasheet
Total Pages: 13
Size: 972.83 KB
Infineon Technologies
This datasheet covers 1 part numbers: IPD80R360P7ATMA1
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IPD80R360P7ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id

3.5V @ 280µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

930pF @ 500V

FET Feature

-

Power Dissipation (Max)

84W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63