IPI12CNE8N G Datasheet
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 85V Current - Continuous Drain (Id) @ 25°C 67A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 12.6mOhm @ 67A, 10V Vgs(th) (Max) @ Id 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 40V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 85V Current - Continuous Drain (Id) @ 25°C 67A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 12.4mOhm @ 67A, 10V Vgs(th) (Max) @ Id 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 40V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 85V Current - Continuous Drain (Id) @ 25°C 67A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 12.9mOhm @ 67A, 10V Vgs(th) (Max) @ Id 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 40V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 85V Current - Continuous Drain (Id) @ 25°C 67A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 12.9mOhm @ 67A, 10V Vgs(th) (Max) @ Id 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 40V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |
