IR2105STR Datasheet
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Manufacturer Infineon Technologies Series - Driven Configuration Half-Bridge Channel Type Synchronous Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10V ~ 20V Logic Voltage - VIL, VIH 0.8V, 3V Current - Peak Output (Source, Sink) 210mA, 360mA Input Type Non-Inverting High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time (Typ) 100ns, 50ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer Infineon Technologies Series - Driven Configuration Half-Bridge Channel Type Synchronous Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10V ~ 20V Logic Voltage - VIL, VIH 0.8V, 3V Current - Peak Output (Source, Sink) 210mA, 360mA Input Type Non-Inverting High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time (Typ) 100ns, 50ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer Infineon Technologies Series - Driven Configuration Half-Bridge Channel Type Synchronous Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10V ~ 20V Logic Voltage - VIL, VIH 0.8V, 3V Current - Peak Output (Source, Sink) 210mA, 360mA Input Type Non-Inverting High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time (Typ) 100ns, 50ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-PDIP |
