Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF3710ZGPBF Datasheet

IRF3710ZGPBF Datasheet
Total Pages: 9
Size: 278.21 KB
Infineon Technologies
This datasheet covers 1 part numbers: IRF3710ZGPBF
IRF3710ZGPBF Datasheet Page 1
IRF3710ZGPBF Datasheet Page 2
IRF3710ZGPBF Datasheet Page 3
IRF3710ZGPBF Datasheet Page 4
IRF3710ZGPBF Datasheet Page 5
IRF3710ZGPBF Datasheet Page 6
IRF3710ZGPBF Datasheet Page 7
IRF3710ZGPBF Datasheet Page 8
IRF3710ZGPBF Datasheet Page 9
IRF3710ZGPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

59A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

18mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

4V @ 250mA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 25V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3