IRF5851TR Datasheet
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Manufacturer Infineon Technologies Series HEXFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.7A, 2.2A Rds On (Max) @ Id, Vgs 90mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V Power - Max 960mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package 6-TSOP |
Manufacturer Infineon Technologies Series HEXFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.7A, 2.2A Rds On (Max) @ Id, Vgs 90mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V Power - Max 960mW Operating Temperature - Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package 6-TSOP |
