IRF6608TR1 Datasheet
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 13A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9mOhm @ 13A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2120pF @ 15V FET Feature - Power Dissipation (Max) 2.1W (Ta), 42W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET™ ST Package / Case DirectFET™ Isometric ST |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 13A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9mOhm @ 13A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2120pF @ 15V FET Feature - Power Dissipation (Max) 2.1W (Ta), 42W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET™ ST Package / Case DirectFET™ Isometric ST |
