Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF6633TR1 Datasheet

IRF6633TR1 Datasheet
Total Pages: 10
Size: 260.8 KB
Infineon Technologies
This datasheet covers 1 part numbers: IRF6633TR1
IRF6633TR1 Datasheet Page 1
IRF6633TR1 Datasheet Page 2
IRF6633TR1 Datasheet Page 3
IRF6633TR1 Datasheet Page 4
IRF6633TR1 Datasheet Page 5
IRF6633TR1 Datasheet Page 6
IRF6633TR1 Datasheet Page 7
IRF6633TR1 Datasheet Page 8
IRF6633TR1 Datasheet Page 9
IRF6633TR1 Datasheet Page 10
IRF6633TR1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

16A (Ta), 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.6mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1250pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.3W (Ta), 42W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MP

Package / Case

DirectFET™ Isometric MP